Abstract

This paper presents a new model for the surface roughness (SR) limited mobility (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SR</sub> ). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental mobility for Si bulk MOSFETs shows that a good agreement with measured mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker mobility degradation with respect to the T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">w</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> behavior.

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