Abstract
We report an observed relationship between chemical modifications and physical morphological roughness on a photoresist for ArF excimer laser photolithography in fluorocarbon plasma beam irradiation. At the very beginning period, three stages of characteristics of chemical changes occurred upon surface roughening or wrinkling of the photoresist; (1) a rapid reduction of C = O bonds, (2) gradual formation of a fluorocarbon layer, and graphitic (sp2-C) or amorphous (sp3-C) carbon layer; (3) as elapsed incubation phase, i.e. lag, where reached a steady state of chemical changes for fluorocarbon ion irradiation on the surface; finally morphological changes initiated. Those processes evolved within dose of 6 × 1015 cm−2 for ion energy of a few hundred eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
