Abstract
Understanding the interfacial properties of functional nanomaterials on semiconductor surfaces is crucial for developing electronics, optoelectronics, and other devices. By using graphene on the germanium (110) surface as a model, we performed scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) to examine the surface reconstructions of Ge (110) under graphene. Two reconstructions, the (1 × 1) phase (R2) which was previously proposed to survive only at high temperature and a [225−1] superstructure (R1 phase), were determined based on atomically resolved STM images. The R2 phase will transform to R1 after annealing in UHV above 300 °C, while the R1 phase can reversibly change to the (1 × 1) phase after heating in hydrogen at 700 °C. Finally, we confirmed the presence of interfacial hydrogen that stabilized the (1 × 1) phase at the initial stage of graphene growth based on control experiments. The zigzag edge of graphene is perpendicular to the close-packed [1–10] direction of Ge(1...
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