Abstract
New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.
Highlights
TheoryWhen the solar cell is under illumination, the density of the photogenerated carrier in the base is governed by the following continuity equation: D
The optimum thickness (H) of the silicon solar cell base leading to the maximum short circuit current is determined according to the doping rate Nb) D ( (Nb) (D), for a low level of illumination n
The rear face corresponds to a zone of higher doping rate (p+), in x = H, produces an electric field, which allows the return of the minority carrier towards the junction, and characterized by a recombination velocity (Sb) [10]
Summary
When the solar cell is under illumination, the density of the photogenerated carrier in the base is governed by the following continuity equation: D. The diffusion coefficient and the lifetime of the excess minority carrier are related to the doping rate of the base (Nb in cm−3) by the following empirical relations [36] [37]:. A and B are coefficients determined from the boundary conditions which respectively introduce the recombination velocity of the minority charge carrier at the junction (Sf) and at the rear face (Sb) [40]. The first solar cells did not have this technology, the contact was ohmic type, and the recombination velocity Sb was very high At this surface where there is a potential barrier, a part of the minority carrier can cross this junction p/p+ [34]
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