Abstract
The photoelectrochemical behaviour of n-GaAs in alkaline solution is discussed with particular reference to the influence of surface recombination on steady state and periodic behaviour. Intensity modulated photocurrents have been analysed in order to obtain information about the kinetics of surface recombination processes, and the theoretical response expected for different types of surface potential distribution are derived and compared with experimental results. It is shown that the surface potential of n-GaAs depends on pretreatment and that surface heterogeneity can exert an important influence on the frequency response under modulated illumination.
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