Surface Reactivity and Magnetism at Metal-Semiconductor Interfaces

Abstract

The interplay between magnetic properties and structure and interdifussion at interfaces is analyzed mainly by surface science methods and by core level spectroscopies (based on X-ray absorption XAS and X-ray photoelectron spectroscopy XPS) on model systems implying deposition of magnetic metals (Fe, Co, Sm) on usual semiconductors (Si, GaAs, InAs). The Chapters begins with a review of the core level spectroscopies and of derived techniques, such as X-ray photoelectron diffraction (XPD) from XPS and X-ray magnetic circular dichroism (XMCD) from XAS, together with a brief description of other surface science techniques employed, such as low energy electron diffraction (LEED), reflection high energy electron diffraction (RHEED), magneto-optical Kerr effect (MOKE), and with some basics of the molecular beam epitaxy (MBE) method. The examples are organized in pairs, namely one analyzes comparatively (i) interfaces formed by Fe or by Sm on Si(001), (ii) by Fe on GaAs(001) and on InAs(001), (iii) and by Co on bare GaAs(011) and on GaAs(011) passivated with Sb, in order to outline how small changes of the nature of the metal deposited, of the substrate (though identical from the chemical point of view) and of its initial state may result in strong deviations concerning both the quality of structures obtained and their magnetic properties. For instance, it is shown that Sb/Si(001) yields better properties than Fe/Si(001), Fe/InAs(001) exhibits lower reactivity and enhanced Fe magnetic moments than Fe/GaAs(001), and that passivation with antimony of GaAs(011) substrates yields to a reduced As out-diffusion into the metal layer, yielding lower tetragonal distortion and enhanced Co magnetic moments.