Abstract
ABSTRACTHydrogen contents were investigated in a-Si:H films prepared by PECVD under various conditions. The H atom contents were divided into SiH and SiH2 densities by spectral deconvolution of the IR absorption. Dehydrogenation of SiHo simultaneously occurs with Si-Si bonding in the surface reaction. The mechanisms of surface reaction were proposed based on an analysis of the variation in S1H2 density with the deposition condition. There are two kinds of processes, the fast process and the slow process. The fast process incorporates SiH2 into the network. The activation energy of the slow process is 0.3 eV, which is due to the surface migration of adsorbed radicals.
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