Abstract
The surface loss probability β of CH3 radicals on a-C:H surface is determined by time-resolved threshold ionization mass spectrometry in pulsed RF discharges. In the post-discharge, the β value decreases from 0.011–0.015 to 0.001–0.002 in about 10 ms. This time evolution suggests that the loss probability depends on incoming ion and radical fluxes on the surface. We present a simple model of the surface reaction kinetics in which the number of active chemisorption sites on the surface is determined by the balance between their production, due to ions and/or H, and their annihilation, due to CH3 radicals. The model describes fairly well the observed decay of the CH3 radical density and the time evolution of β determined experimentally in the afterglow. The maximum contribution of the CH3 radicals to the deposition rate of a-C:H films was deduced to be about 60% of the total deposition rate determined experimentally.
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