Abstract
Different methods are proposed for protecting the surfaces of silicon substrates in the fabrication of silicon transistors. The results of thermal operations with technological regimes for obtaining a low-melting glassy layer in order to protect the surface of p – n junction substrates from different external actions are presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Glass and Ceramics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
