Abstract
ZrO2 thin films were investigated by surface characterization in a Cl2/Ar gas mixture adaptively coupled plasma system. The plasmas were characterized by optical emission spectroscopy analysis. The crystal structures of the films etched with gases at various mixing ratios were observed by X-ray diffraction. The results can show the damage caused by ion bombardment and chemical reaction of plasma on the crystalline structure of the ZrO2 surface. The chemical reactions of the etched ZrO2 films were investigated by angle-resolved X-ray photoelectron spectroscopy. The etching mechanism of ZrO2 thin films could be explained as Zr interacting with the Cl radical upon adding Cl2, but remaining at the surface owing to the low volatility of ZrClx. From the experimental results, the etching mechanism of ZrO2 was described as ion-assisted chemical reaction.
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