Surface properties of diamond wire sawn photovoltaic mc-Si wafers by stirred slurry pretreated and additive-free acid textured

Abstract

Diamond wire saw cutting multi-crystalline silicon (mc-Si) wafers has the advantage of high cutting rate. However, it is difficult to follow the current additive-free wet acid etching process to prepare the anti-reflective textured surface due to the obvious saw marks on the surface of the as-sawn wafer. In response to this problem, this paper proposes a turbine-type stirred slurry pretreatment process to modify the surface of mc-Si wafers cut by diamond wire to make it suitable for the subsequent conventional wet acid texturing process. The experimental results show that the consistency of the surface structure of the mc-Si wafers can be effectively improved after turbine-type stirred slurry pretreatment by choosing suitable process parameters. The reflectivity of the pretreated mc-Si wafers after acid texturing is greatly reduced compared with that before processing, which can meet the production requirements of solar photovoltaic cells. Furthermore, based on ANSYS Workbench and Fluent, numerical simulation of the surface pretreatment process of large-size silicon wafers in practical industrial applications was carried out, and the uniformity of the surface modification treatment was analyzed. The research results provide ideas for promoting the adaptation of the diamond wire sawing of mc-Si silicon wafers to the acid wet texturing technology.