Surface profile measurement of doped silicon using near-infrared low-coherence light.

Abstract

A scanning interferometry system based on near-infrared low-coherence interferometry by using a superluminescent diode (SLD) as the light source is presented. The system cannot only measure the surface profile of doped double-sided polished silicon but also measure its optical thickness and refractive index. The measurement system uses near-infrared CCD to detect interferometric light in the near infrared, based on the Michelson interference principle. SLD has low temporal and high spatial coherence and high penetration to doped silicon wafers; thus, higher visibility can be obtained when measuring the rear side. Meanwhile, the optical thickness measured by low coherent scanning interference is compared with the optical thickness obtained by spectrally resolved interferometry to verify the accuracy of the system. Due to the periodic characteristics of interference fringes, the coherence length of the narrowband light source is usually greater than the path length difference of the interferometer. It gives the measurement a phase ambiguity of 2π, which may severely limit the application of the measurement. However, the short coherent length SLD light source used in the project can avoid 2π phase ambiguity problems. Besides, this system can perform full scanning in a larger step and achieve rapid on-line measurement of the target surface.