Abstract

Recently, the surface profiles of nanostructures have been reduced in size in order to develop microfabrication techniques, such as lithography and nanoimprinting. In particular, feature sizes of a few tens of nanometers are common in the semiconductor industry. This study uses a Mueller matrix polarimeter, which is based on a scatterometry technique, to evaluate the surface profiles of nanostructures. In this technique, a nanostructure profile is determined from the Mueller matrix which expresses all the polarization properties of the sample by experimental measurements and calculated values using rigorous coupled-wave analysis (RCWA). This technique is more useful than conventional scatterometry based on ellipsometry since it is able to determine the total polarization properties of a sample. This is because, the Mueller matrix is able to estimate the surface profile of a nanostructure to greater precision. The grating period of a Cr/Cr<sub>2</sub>O<sub>3</sub> structure on a SiO<sub>2</sub> substrate was measured using a dual-rotating retarder polarimeter. The experimental results agree well with the values obtained by numerical analysis. We measured the characteristic of non-diagonal elements in the Mueller matrix by varying the incidence azimuth of the sample. We have demonstrated the possibility of evaluating a nanostructure profile from the Mueller matrix.

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