Abstract
A comprehensive view of the growth mechanisms occuring during the deposition of polycrystalline or monocrystalline thin silicon films clearly is an important step towards controlling the growth process. Experimental results concerning the growth kinetics are discussed in terms of growth theories. Monocrystalline deposition kinetics can be explained by a step flow mechanism inhibited by hydrogen adsorption whereas polycrystalline kinetics relies on atomistic nucleation theory.
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