Surface processes and rate-determining steps in plasma-induced chemical vapour deposition: Titanium nitride, boron carbide and silicon

Abstract

Several recently developed plasma chemical vapour deposition (CVD) processes, including the low temperature deposition of high quality TiN and large area in situ CVD of boron carbide protective coatings, are discussed. A detailed insight into the reaction mechanism and the rate-determining steps has been obtained for the deposition of amorphous and crystalline silicon. Particular attention is devoted to the processes taking place at the surface of the growing film.