Abstract
The effects of different surface preparation (HF solution cleaned substrate, thermally and chemically oxidized substrates) and post thermal treatment on Al 2O 3 dielectric properties were investigated. High resolution transmission electron microscopy showed different characteristics of interfacial growth between each surface preparation. Al 2O 3 films remained amorphous after annealing at 800 °C whatever the surface preparation. Angle-resolved X-ray photoelectron spectroscopy revealed that interfacial layer is composed of SiO x and Al-silicate layer. As-deposited Al 2O 3 film on HF solution cleaned substrate showed higher and more unstable leakage current than those grown on SiO 2 layer. However low and stable currents (10 −8–10 −9 A/cm 2 at −1 V) were obtained for all samples after annealing at 1000 °C. The I– V characteristics measured in various temperatures fitted well with Fowler–Nordheim conduction in high electric field. The interface state density ( D it) was reduced after annealing at 800 °C.
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