Abstract
We have measured a semiconductor region of a commercial silicon fast recovery diode (Si-FRD) under applied bias voltages by frequency modulation atomic force microscopy and Kelvin probe force microscopy. Under applied reverse bias voltage, a potential contrast was observed at a pn- junction in a potential image of the Si-FRD. Under applied forward bias voltage, A potential contrast was observed at a n-n junction in a potential image of the Si-FRD with a state of conductivity modulation.
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