Abstract
A novel method for synthesis of Boron Nitride nano-sheets (BNNS) using chemical route is presented here. Being chemically inert synthesis of BNNS is pretty much difficult yet the suitable selection of solvent and sonication time results in a good amount of BNNS. The UV-VIS spectrum and Raman spectrum of synthesized BNNS prove that an efficient quality of sample has been synthesized. The surface potential mapping of the BNNS has been taken using Scanning Kelvin Probe Microscope (SKPM), which allows us to measure the work function (WF) value using the contact potential difference (CPD) of synthesized BNNS on Si substrate and gold tip embedded in SKPM. The value of WF of BNNS/Si comes out to be ∼5.8 eV. This result will be helpful to understand the substrate effect on the WF of hBN as well as to explore the possibility of robust BNNS to use in photoelectric devices.
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