Abstract
Scanning probe microscope (SPM) is used to investigate the morphology and the electric properties of the surface, as well as the interface, of LaAlO3/SrTiO3 (LAO/STO) films. To establish the physical properties of the heteroepitaxial oxide interface, we characterized single- and mixed-termination of the STO substrates by using nanoscopic measurements of the electric and the structural properties, as well as the LAO film grown on the mixed-terminated STO substrates. In the case of the LAO film grown on the low-miscut STO substrate, the surface potential only showed a difference at the step edge while the LAO film on the high-miscut STO substrate showed a considerable change in the surface potential distribution at the region in which step bunching has occurred. In the poling experiment, a significant rise in the surface potential difference is observed after writing of the DC bias.
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