Abstract
The atomic composition and electronic structure of topological insulators (TI) Bi2Se3 grown by the two-temperature Physical Vapor Deposition on n-type Si patterned substrates, have been followed in details during slight variations of the growth temperatures and values of thickness close to that of the topological transition (about 6 nm), by means of submicron lateral probe photoemission with enhanced surface sensitivity (less than 1 nm). Raman and atomic force microscopy together with Kelvin probe microscopy provide a coherent picture where the fine tuning of Se doping and of the growth temperatures constrain the on–set of the gapless state at the exact middle point of the gap.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
