Abstract
A closed-form scheme for the front- and back-side surface potential calculation in the dynamic-depletion mode of polysilicon thin-film transistors is developed by including both the Gaussian deep states and the exponential tail states. The explicit relationship between the surface potentials of both sides is extracted, and the Poisson equation is also solved. The proposed scheme provides both accuracy and computational efficiency for circuit analysis in simulators. The universal solution is physical-based and is verified by both numerical simulation and experiments.
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