Surface Plasmonic Lasing in Micro-Nanostructures of Silicon Excited by using Pulsed Infrared Lasers

Abstract

Surface plasmon is a possible candidate to break the diffraction limit and open the door for developing nanolasers on silicon chips. A new step in this development involves the choice of the structures and compositions for better surface plasmonic emission. The micro-nanostructures were fabricated by using a nanosecond pulsed laser on silicon surface, in which the surface plasmonic emission is stronger. The group of emission peaks with multiple-longitudinal-mode occurs in the optical gain curve. Interestingly, the quantum energy of surface plasmon with 140[Formula: see text]meV has been measured at first, which is related to the peak interval (about 62[Formula: see text]nm) of longitudinal modes in the surface plasmonic lasing spectra. The surface plasmonic lasing near 865[Formula: see text]nm was observed in the Purcell cavity with Si–Cr–Si layers excited by using pulsed lasers at 1064[Formula: see text]nm. Surface plasmonic structure induced with photons was observed by using the reflection Talbot effect image, in which the mechanism of the surface plasmonic lasing can be explored. The physical model of the surface plasmonic laser has been built on the energy levels of the micro-nanostructures of Si.