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Abstract
Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region) due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation.
Highlights
ZnS is an important II–VI direct band-gap semiconductor that possesses unique properties and has potential applications in numerous areas like optics, electronics, photocatalysis, lasers and electric nanodevices.[1]
Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy
This paper reports the preparation of Ag incorporated ZnS thin films by RF magnetron sputtering technique and the effect of Ag incorporation on crystallinity, microstructure and optical properties
Summary
ZnS is an important II–VI direct band-gap semiconductor that possesses unique properties and has potential applications in numerous areas like optics, electronics, photocatalysis, lasers and electric nanodevices.[1] ZnS has a large band gap (3.7 eV), high refractive index (2.35) and a wide wavelength pass band (0.4-13 μm).[2] Polycrystalline and nanocrystalline ZnS thin films have received much attention because of its probable important role in the photovoltaic technology and its vast application in optoelectronic devices.[3] Zinc sulfide thin films can be prepared by different techniques including sputtering,[4,5] metal oraganic chemical vapor deposition,[6] molecular beam epitaxy,[7] atomic layer epitaxy,[8] chemical bath deposition,[9] close spaced vacuum sublimation[10] and pulsed laser deposition[11,12]. The effect of surface plasmons on the quenching of luminescence emissions from the defects sites of ZnS is discussed
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