Abstract
We investigate surface plasmon-phonon polaritons in n-doped GaAs with the aim to obtain terahertz radiation emission. Dispersion of the surface plasmon-phonon polaritons is theoretically simulated taking into account contributions of the lattice and electron subsystems to the dielectric permittivity of n-GaAs. It is shown that regular grating at outer surface of GaAs provides a possibility to convert surface plasmon-phonon polaritons into terahertz photons and vice versa.
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