Abstract
We integrate two dimensional hole arrays (2DHAs),a plasmonic structure, into silicon based blocked impurity band (BIB) terahertz detectors. The photoresponse of the BIB device without 2DHA covers a broad spectral range from 31 μm (9.68 THz) to 15 μm (20 THz). Although 80% of the active region is covered with a metal film in the surface plasmon (SP)-enhanced device, its absolute photoresponse is 120% higher than that of the reference device at the peak wavelength. We further find that the SP-enhanced device presents about 8-fold enhancement in comparison with the reference device at λ = 30.7 μm (9.77 THz) that is beyond the SP resonance. By an energy band model and electromagnetic field simulation, we discover that the photoresponse enhancement at both the resonance wavelength and the non-resonance wavelength is related to a strong confined electromagnetic field at the interface of the 2DHAs and active region.
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