Abstract
Metal-nitrides of hafnium nitride (HfN), zirconium nitride (ZrN) and titanium nitride (TiN) are investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN:Eu red light emitter. Theoretical calculations are performed to evaluate the surface plasmon polariton dispersion relation and Purcell enhancement factor for a single metal-nitride layer on top of the GaN:Eu emitter. Our findings suggest that among the metal-nitrides investigated in this study, TiN is the most promising candidate for use as plasmonic material to increase the internal quantum efficiency in GaN:Eu red light emitters.
Highlights
In our recent work[18], we developed a current injection efficiency model to understand the governing parameters affecting the internal quantum efficiency and efficiency-droop characteristics in the electrically-driven GaN:Eu LEDs
It has been shown that if the light source is close to the conductive layer within the wavelength scale, a surface plasmon polariton (SPP) can be generated via direct energy transfer from the light source to the surface plasmon
The transition-metal nitrides, such as titanium nitride (TiN), hafnium nitride (HfN) and zirconium nitride (ZrN), are promising candidates as low-loss plasmonic materials in the visible and near-IR spectral regimes attributed to the ability for achieving negative real permittivity values at relatively lower carrier concentrations[32,33,34,35,36,37]
Summary
Metal-nitrides of hafnium nitride (HfN), zirconium nitride (ZrN) and titanium nitride (TiN) are investigated as plasmonic materials to enhance the internal quantum efficiency of a GaN:Eu red light emitter. The transition-metal nitrides, such as titanium nitride (TiN), hafnium nitride (HfN) and zirconium nitride (ZrN), are promising candidates as low-loss plasmonic materials in the visible and near-IR spectral regimes attributed to the ability for achieving negative real permittivity values at relatively lower carrier concentrations[32,33,34,35,36,37] These materials offer a wide tunability of their dielectric properties, usually through the variation of the deposition parameters[32,33,34,35,36,37]. The impact on the electrically-driven device characteristics for TiN-based surface plasmon coupled on GaN:Eu LEDs is presented
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