Abstract
AbstractLayers of pyridine terminated CdSe quantum dots (QDs) with thicknesses from a monolayer (ML) to 80 nm were deposited on ITO substrates by dip coating. Transient surface photovoltage measurements showed dominant charge separation within the first ML of QDs at short times and an increasing influence of layer thickness at long times. Auger recombination limited the maximum of separated charge carriers to about 1 × 1012 cm‐2.magnified imageSeparation of photo‐generated electron‐hole pairs within a ML of CdSe‐QDs. Electrons were either trapped on ITO surface states or separated due to a built‐in electrical field created by a transferred electron from the ITO to a trap state at the QD. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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