Abstract
Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10 -4 Pa over the temperature range 500–700 K and of those exposed to O 2. The influence of both the annealing temperature and the O 2 adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level E F and the top of the valence band was determined.
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