Abstract

Room temperature surface photovoltage (SPV), differential surface photovoltage (DSPV), and photoreflectance (PR) measurements were performed on InGaAs/AlAsSb QWs grown on InP substrates. Clear and well‐resolved structures, which could be attributed to the interband optical transitions originating in the QWs, were observed in every spectrum. Transition energies measured from the SPV, DSPV, and PR spectra correspond well with those theoretically calculated from the confined energy levels in the QWs. Features those can be attributed to the transitions at the AlAsSb to InP hetero‐interfaces were observed in the SPV and DSPV spectra.

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