Abstract
The proper combination of sequential ion implantation and thermal annealing can successfully fabricate binary semiconductor quantum dots (QDs), such as InP, GaP and GaAs QDs. Far-infrared reflectance techniques can be effectively employed to identify the species formed before and after various thermal treatments via probing molecular vibrations and surface phonons of the QDs. This technique is very useful for the characterization of an ultra-thin layer of foreign species on or in the near surface of the bulk substrate materials. In addition, this technique is non-destructive, simple and versatile. The examples given in the present report are InP and GaP QDs formed in fused silica and GaAs QDs formed in fused silica and in [0001] substrates.
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