Abstract
We report surface pre-treatment technique for high quality graphene layer formation on SiC surface. It has been demonstrated that silicon passivation of SiC surface using silane flow and subsequent sacrificial oxidation can significantly improve surface condition of the graphene layer on SiC with much fewer carbon dumps and wrinkles, reduced electrical resistance, smoother surface roughness of ~ 2.7 Aå and larger domain size of ~380 Aå. Our results suggest that surface treatment before graphitization is the key to synthesize high quality epitaxial graphene layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
