Abstract
Theoretically and experimentally determined design guides for significantly reduced recombination at the emitter and rear surfaces of full-area Al-BSF (back-surface region) and oxide-passivated bifacial cells are given. The impact of emitter thickness and surface dopant concentration on emitter saturation current and solar cell efficiency is outlined. A modified emitter structure (locally deep diffused below the metal contacts) is predicted to have superior performance. Measured V/sub oc/ values reveal the potential of deep emitter cells to achieve efficiencies above 20% in spite of high metallization factors. Experimentally, a strong dependence of passivation quality on oxide thickness and base doping concentration is found. The BSF quality of a diffused aluminium layer decreases strongly with increasing drive-in time. For SiO/sub 2/-passivated rear surfaces of bifacial cells, measurements of the dependence of the surface recombination velocity on the excess carrier concentration are presented. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
