Abstract
CdTe passivation films have been deposited on Hg1−xCdxTe (x = 0.35) samples used for infrared detectors by low-pressure chemical vapor deposition (LPCVD) and atomic layer deposition (ALD) at temperatures as low as 135°C to 170°C. ALD has been used to deposit an initially uniform starting surface before continuing the deposition using LPCVD. Favorable conformal coverage has been demonstrated on high-aspect-ratio HgCdTe structures. LPCVD deposition rates of 40 nm/h to 70 nm/h were obtained by varying the sample temperature from 135°C to 170°C. Lifetime measurements carried out at 300 K exhibited a significant improvement in minority-carrier lifetime from 0.9 μs (sample without passivation) to 4.28 μs for samples passivated at 135°C.
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