Abstract
CdTe passivation films have been deposited on Hg1−xCdxTe (x = 0.35) samples used for infrared detectors by low-pressure chemical vapor deposition (LPCVD) and atomic layer deposition (ALD) at temperatures as low as 135°C to 170°C. ALD has been used to deposit an initially uniform starting surface before continuing the deposition using LPCVD. Favorable conformal coverage has been demonstrated on high-aspect-ratio HgCdTe structures. LPCVD deposition rates of 40 nm/h to 70 nm/h were obtained by varying the sample temperature from 135°C to 170°C. Lifetime measurements carried out at 300 K exhibited a significant improvement in minority-carrier lifetime from 0.9 μs (sample without passivation) to 4.28 μs for samples passivated at 135°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
