Abstract
We report the effects of H2S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H2S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 μs) of a c-Si wafer without any passivation treatments was also measured for comparison. The highest minority carrier lifetime gain of 2030% was observed at an annealing temperature of 600 °C. The X-ray photoelectron spectroscopy analysis revealed that S atoms were bonded to Si atoms after H2S annealing treatment. This indicates that the increase in minority carrier lifetime originating from the effect of sulfur passivation on the silicon wafer surface involves dangling bonds.
Highlights
In recent years, photovoltaic systems are becoming very popular because of their enormous amount of clean and unlimited solar energy, which can be harvested through photovoltaic solar cells [1,2,3]
We report the effect of sulfur passivation on crystalline silicon wafers using H2 S annealing treatment at various temperatures
After the wafer cleaning procedure, H2 S annealing experiments were carried out to investigate the relationship between temperature and passivation quality
Summary
Photovoltaic systems are becoming very popular because of their enormous amount of clean and unlimited solar energy, which can be harvested through photovoltaic solar cells [1,2,3]. Many advanced passivation materials have been developed and are widely used in commercial production, including SiNX :H, SiOX , and AlOX [4,5,6,7,8,9]. These materials have been shown to have good passivation effects on the silicon wafer surface. These materials are produced through complex fabrication systems that necessitate precise control of gaseous reactants [10]
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