Abstract
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10mM ODT-C2H5OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector.
Highlights
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM)
The results of our previous work show that the modification of the atomic structure using the (NH4)2S-based treatment improves the electrical properties of T2SL InAs/GaSb photodetector, it can disrupt the stability of the surface/interface due to the mesa etching and leave unwanted sulfur residues.[4]
While a number of investigations have been performed in order to perform SAM thiol-based treatment of GaAs, InP and InAs surface,[7,8,9] there is no information about the thiol reaction of GaSb and related materials
Summary
The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The chemical treatment of 10mM ODT-C2H5OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector.
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