Abstract
The recombination of photogenerated carriers seriously restricts their utilization efficiency in photocatalysis. Herein, surface oxygen vacancies (SOVs) were constructed in Pd-Bi2MoO6 interface to bridge ultra-low loading Pd cluster and Bi2MoO6 semiconductor (Pd/BMO-SOVs). It was found SOVs in Pd/Bi2MoO6-x serve as “Electron Bridge” to bridge ultra-low loading Pd cluster and Bi2MoO6-x, thus tremendously enhance utilization efficiency of photoexcited carriers and ultra-low loading Pd active sites for blue LED driven selective oxidation reaction. The Pd(0.05)/Bi2MoO6-SOVs exhibited 57.8 % conversion for selection oxidation of benzyl which are 6.5, 3.3 and 2.1 times higher than pristine Bi2MoO6, Bi2MoO6-x and Pd(0.05)/Bi2MoO6. Combined with theoretical calculations, SOVs was proposed as “Electron Bridge” to transfer photogenerated electrons from Bi2MoO6-x to ultra-low loading Pd clusters, thus greatly boosting separation and utilization efficiency of photogenerated electron-hole pairs.
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