Abstract
Abstract —Polycrystalline silicon (polysilicon) microelectromechanical systems (MEMS) devices subjected to constant tensile stresses do not display delayed fracture in humid ambients unless they also contain thick (>45 nm) surface oxide layers, which are then susceptible to moisture-assisted stress corrosion. Polysilicon MEMS devices with typical (∼3 nm thick) native oxides do not show any thickening of the surface oxide layer after 3 × 10 7 fatigue cycles, excluding stress corrosion of the surface oxide as a cause of fatigue failure. Possible origins of polysilicon fatigue are discussed.
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