Surface-oxide-controlled InGaAs/InAlAs inverted-type metal-oxide-semiconductor high electron mobility transistors for sub-THz high-power amplifiers

Abstract

Herein, we successfully improved the maximum oscillation frequency and maximum stable gain (MSG) across a wide bias range of surface-oxide-controlled (SOC) InGaAs/InAlAs inverted-type metal-oxide-semiconductor high-electron-mobility transistors (inverted MOS-HEMTs) by reducing the gate leakage current and drain conductance (g d). H2O vapor treatment selectively decreased the narrow band gap indium oxide at the surface of the In-based epitaxial layer via the SOC process before the gate oxide deposition. Furthermore, the calculation of band profiles indicated that the gd reduction was possibly attributed to the suppression of impact ionization in the InGaAs channel by inverted MOS-HEMTs. Consequently, SOC-inverted MOS-HEMTs demonstrated a high MSG of >12 dB at 100 GHz across a wide bias range.