Abstract
Herein, we successfully improved the maximum oscillation frequency and maximum stable gain (MSG) across a wide bias range of surface-oxide-controlled (SOC) InGaAs/InAlAs inverted-type metal-oxide-semiconductor high-electron-mobility transistors (inverted MOS-HEMTs) by reducing the gate leakage current and drain conductance (g d). H2O vapor treatment selectively decreased the narrow band gap indium oxide at the surface of the In-based epitaxial layer via the SOC process before the gate oxide deposition. Furthermore, the calculation of band profiles indicated that the gd reduction was possibly attributed to the suppression of impact ionization in the InGaAs channel by inverted MOS-HEMTs. Consequently, SOC-inverted MOS-HEMTs demonstrated a high MSG of >12 dB at 100 GHz across a wide bias range.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.