Abstract
A review is presented of the results obtained on the formation of nitride surface layers on semiconductor (Si) and metal (Ti) samples by multipulse (up to 2500) XeCl excimer laser (λ=308 nm) irradiation in N 2 and NH 3 atmosphere through a collaboration of Italian, Czechoslovak and Romanian laboratories. Different diagnostic techniques (optical and electron microscopy, Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger and x-ray photoelectron spectroscopy) were used to positively identify the formed compounds. Silicon nitride formation was obtained only when laser irradiation was performed in ammonia atmosphere. In contrast, when titanium samples were irradiated the nitridation process resulted very efficient in both atmospheres. The characteristics of laser synthesized nitride layers are illustrated and discussed as a function of the kind of irradiated materials, the number of subsequent laser pulses and the nature of the ambient gas.
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