Surface-Nanostructured Al–AlN Composite Thin Films with Excellent Broad-Band Antireflection Properties Fabricated by Limited Reactive Sputtering

Abstract

Al–AlN composite thin films with surface nanostructures possessing excellent broad-band antireflection properties can be simply fabricated by using a simple sputtering-based method, namely, limited reactive sputtering at elevated temperature. A mixture of Ar and N2 gases with limited gas flow of N2 is used. During the process, the limited amount of the N ions and radicals can only consume some of the sputtered Al atoms for the formation of AlN, so that the Al–AlN composite thin film can finally be deposited on the substrate. Compared to the traditional cosputtering for composite deposition, which works necessarily with two or more targets simultaneously, here only a single Al target is required. When the substrate temperature is higher than 100 °C, surface nanostructures can be evolved because of the different diffusion kinetics of Al and AlN. The total reflection was reduced drastically (<10%) in the spectral range 300–2000 nm. The Al–AlN composite thin films exhibit also a good electric conductivity.