Abstract
AbstractWe have investigated the surface morphology of thick SiGe layers grown on Si(100) substrates. SiGe layers containing different Ge concentrations (from 0 to 16 at.%) and having thickness of about 15μm are prepared by liquid phase epitaxy (LPE) method using various growth conditions. The wavelength of undulation of SiGe layers is found to be increasing when we adopt low cooling rates during LPE process. The roughness of the layer does not show any significant change with cooling rate.
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