Abstract
InP thin films grown by solid source molecular beam epitaxy on InP(001) substrates have been studied by atomic force microscopy (AFM). The morphology of the films is highly dependent on growth temperature and the P2:In incident flux ratio. High substrate temperatures and low flux ratios result in a large density of micron-sized, three-dimensional islands and a poor overall surface morphology. By contrast, relatively low substrate temperatures and high flux ratios lead to very smooth surfaces with a negligible defect density. The results indicate that a high incident P2 flux is required to generate a sufficient phosphorus supply for the growth of morphologically smooth InP thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
