Abstract
The surface morphology of gold thin films deposited on poly(ethylene naphtalate) (PEN) organic films has been investigated for quantum cross devices. The surface roughness of gold thin films on the PEN films is 1.5–1.9 nm and the appearance of mound structures is observed. The mound grain sizes are 28.0±4.6 nm for 5-nm-thick gold films and 45.8±5.8 nm for 10-nm-thick gold films. From the result of the scaling investigation of the surface roughness, the surface roughness of 5-nm-thick gold films is 0.22 nm, corresponding to one atomic size, in the scanning scale of 5 nm. These experimental results indicate that gold thin films on PEN films are suitable for use in quantum cross devices, and may open up a novel research field on the electric characteristics of quantum cross devices using a few atoms or molecules leading to high-density memories.
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