Abstract
Surface morphology and reconstruction of Ga adsorbed Si(113) surface have been investigated using scanning tunneling microscopy and reflection high-energy electron diffraction. Surface reconstruction changes from clean 3×2 structure to 3×1 structure at 0.2 ML Ga deposition. Then the surface changes to 2×2 structure at 0.4 ML Ga deposition. For more than 1 ML Ga deposition, well-ordered one-dimensional facet structure is formed with its width of about 5 nm. The two faces of the facet are determined as (112) and (115) surfaces. The surfaces have N×1 (N=4–8) and 4×1 reconstructions, respectively. On (112) facet, mostly observed structure is 6×1, and this result agrees with previously reported result of Ga deposition on flat (112) surface. While on (115) surface, two kinds of 4×1 structures which are symmetric to [332̄] direction are observed. It is considered that nucleation of (112) facet leads a flat (113) surface to facet structure.
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