Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer**Supported by the National Natural Science Foundation of China (Grant Nos. 11574362 and 61704008).

Abstract

We demonstrate that a low-temperature GaN insertion layer could significantly improve the surface morphology of non-polar a-plane GaN.The two key factors in improving the surface morphology of non-polar a-plane GaN are growth temperature and growth time of the GaN insertion layer. The root-mean-square roughness of a-plane GaN is reduced by 75% compared to the sample without the GaN insertion layer. Meanwhile, the GaN insertion layer is also beneficial for improving crystal quality. This work provides a simple and effective method to improve the surface morphology of non-polar a-plane GaN.