Abstract
In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films were studied by atomic force microscopy (AFM). It was found that average surface roughness values decreased as the film thickness increased from 100 nm to 350 nm. Fractal geometry and statistical physics techniques have been used to study a variety of irregular films within a common framework of the variance thickness. The Hurst exponent H and growth exponent ? for ITO thin films were determined to be 0.73 ? 0.01 and 0.078, respectively. Based on these results, we suggest that the growth of ITO thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.
Highlights
Indium tin oxide (ITO) is an n-type wide band-gap (3.3 4.3 eV) semiconductor which by doping with tin, the density of the carrier can be increased up to the Mott critical ((1020/cm3), and the highly degenerated semiconductor is formed
We suggest that the growth of indium tin oxide (ITO) thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation
In order to study the microstructure of the ITO thin films, prepared at room temperature, the X-ray diffractometer (XRD) measurements were performed
Summary
Indium tin oxide (ITO) is an n-type wide band-gap (3.3 4.3 eV) semiconductor which by doping with tin, the density of the carrier can be increased up to the Mott critical ((1020/cm3), and the highly degenerated semiconductor is formed. This semiconductor shows high transmission in the visible and near-IR regions of the spectrum [1,2]. Quantitative information is expressed by Hurst’s exponent H. the Hurst rescaled range (R/S) analysis were applied to determine the fractal dimension and Hurst exponent of ITO thin films. We employ atomic force microscopy to investigate surface roughness parameters of ITO films prepared by electron beam evaporation technique. AFM images of the evaporated deposition ITO films indicate changes in surface behavior of the film at different thickness
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