Abstract
Using a kinetic Monte Carlo simulation, the homoepitaxial growth on a GaAs(100) vicinal surface misoriented toward the [011] direction has been studied. The growth mode transition, the topmost coverage variation and the surface morphology development are examined by varying the As/Ga flux ratio as well as the temperature. The kinetics of As play an important role in determining the growth mode transition, the coverage variation and the surface morphology during growth, which are similar to the case of a vicinal surface misoriented toward the [011] direction. A continuous growth mode transition is observed and is related to the surface morphology.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
