Abstract
The dependence of surface morphology of the SiC(0001) substrate on the rate with which it is heated up to the temperature of graphene growth was studied by three techniques: atomic force microscopy, Raman spectroscopy and Kelvin probe force microscopy. The study was carried out for the rates of substrates heating ranging from 100 °C/min to 320 °C/min. As a result, it was found out that both the width of the terraces forming on the surface of SiC substrate and the uniformity of the graphene layers covering these terraces significantly depend on the applied rate of the heating. It was also shown that the most homogeneous monolayer graphene with the minimum of double-layers inclusions is formed if the rate of SiC heating is about 250 °C/min.
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