Abstract
(Zn,Sn)Se films of different chemical composition ratio Zn/Sn were obtained by chemical molecular beam deposition (CMBD) method on borasilicate glass with variation the ratio of the partial pressure of ZnSe and SnSe in vapour phase during growth. Chemical and phase composition, as well as surface morphology of samples were investigated. The samples were found to be a thin films with a thickness of 2–3 μm with and evenly distribution of chemical elements. Grain structure, phase composition and surface roughness parameters dependencies on the elemental composition are determined.
Highlights
Silicon with an efficiency of 27.6%, Cu(In,Ga)Se2 – 23.35% and CdTe – 22.1% are the leading materials on the world market of photovoltaics [1]
The atomic force microscope (AFM) instrument was used in the semi-contact mode, with a scanning probe of 10 nm tip radius, at a resonance frequency of 236 kHz
With the increase of x from 0.02 to 0.06, 0.10, 0.20, stoichiometric composition the diffraction patterns show a redistribution of the integral intensities of the reflections of SnSe2 and SnSe phases, decrease of most reflections of Se and SnSe phases intensity up to their disappearance, emergence of ZnSe phase weak reflections at x = 0.20
Summary
Silicon with an efficiency of 27.6%, Cu(In,Ga)Se2 – 23.35% and CdTe – 22.1% are the leading materials on the world market of photovoltaics [1]. The main disadvantages of Si use as a base material for solar cells are: the band gap of silicon (1.1 eV) is less, than the optimal value of 1.4–1.6 eV [2], the absorption coefficient is low (~102 cm–1). Further widespread use of thin-film solar cells based on Cu(In,Ga)Se2 and CdTe causes great difficulties, because of the limited reserves of In, Ga, Te in the earth’s crust, and the toxicity of cadmium [4]. (Zn,Sn)Se has no disadvantages found in Si, Cu(In,Ga)Se2 and CdTe This material has unique properties for creating thin-film solar cells: high absorption coefficient ~105 cm–1, optimal band gap ~1.45 eV, p-type of conductivity; besides, Zn, Sn, Se are cheap and widespread in the earth’s crust [11]. The AFM instrument was used in the semi-contact mode, with a scanning probe of 10 nm tip radius, at a resonance frequency of 236 kHz
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