Abstract
YBa 2Cu 3O 7 films deposited on Al 2O 3 by laser ablation show c-axis oriented growth and critical temperatures T c as high as 90 K. However the critical current density J c is comparatively low. An improvement was achieved by using a ZrO 2 intermediate layer which acts as a diffusion barrier. Bilayer YBa 2Cu 3O 7/ZrO 2 films prepared in-situ by laser ablation from a multi-target system under various conditions and with several buffer layer thicknesses exhibited J c-values up to 5·10 5 A/cm 2 at 77 K. The structure and the surfaces of the films were characterised by x-ray diffraction and scanning electron microscopy, respectively. The critical current density was measured as function of temperature, external magnetic field B, and relative orientation between B and the film surfaces.
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